Secondary coulomb blockade gap in a four-island tunnel-junction array

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 4, 1999, Pages 3160-3167

  Shin, Mincheol ^a   Lee, Seongjae ^a   Park, KyoungWan ^a   Lee, E ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005361352     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.3160     Document Type: Article

References (14)

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13. In general, the tunneling process which leads to the conduction of the four-island array is not necessarily the one mentioned in the text. For lower values of (Formula presented) for instance, two electrons get trapped on islands 1 and 3 initially, and the tunneling process which triggers the conduction is either the one where the trapped electron on island 3 exits through the drain or the one where the trapped electron on island 1 advances forward. When the uniform background charges are induced on each island, as will be discussed later, the situation becomes very complicated. However, for the range of (Formula presented) that we are interested in in this paper, the tunneling process mentioned in the text is the one responsible for the conduction.
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