Charging/discharging of silicon nanocrystals embedded in an SiO2 matrix inducing reduction/recovery in the total capacitance and tunneling current

Smart Materials and Structures

Volumn 15, Issue 1, 2006, Pages

  Ng, C Y ^a   Liu, Y ^a   Chen, T P ^a   Tse, M S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRON TUNNELING; SILICON;

GATE OXIDE CAPACITANCE; NANOCRYSTALS; TUNNELING CURRENTS;

NANOSTRUCTURED MATERIALS;

EID: 31144469981     PISSN: 09641726     EISSN: 1361665X     Source Type: Journal    
DOI: 10.1088/0964-1726/15/1/008     Document Type: Conference Paper

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