Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 38, Issue 1-2, 2007, Pages 54-58

  Morales, A ^a   Barreto, J ^a   Dominguez C ^a   Riera, M ^a   Aceves, M ^b   Carrillo, J ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^c BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

Author keywords

Infrared spectroscopy; Photoluminescence; Silicon rich oxide; XPS

Indexed keywords

HYDROGEN BONDS; INFRARED SPECTROSCOPY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ROOM TEMPERATURE; SILICON RICH OXIDES; THERMAL SILICON OXIDE;

SILICON COMPOUNDS;

EID: 34147150176     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.12.056     Document Type: Article

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