Growth of two-dimensional arrays of silicon nanocrystals in thin SiO 2 layers by low pressure chemical vapour deposition and high temperature annealing/oxidation. Investigation of their charging properties

Nanotechnology

Volumn 15, Issue 9, 2004, Pages 1233-1239

  Salonidou, A ^a   Nassiopoulou, A G ^a   Giannakopoulos, K ^a   Travlos, A ^a   Ioannou Sougleridis, V ^a   Tsoi, E ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; OXIDATION; OXYGEN; SILICA; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

FLOATING GATE (FG) MEMORIES; GATE ELECTRODES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 4644263022     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/9/021     Document Type: Article

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