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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 38, Issue 1-2, 2007, Pages 193-196

Pulsed electroluminescence in silicon nanocrystals-based devices fabricated by PECVD

(9) Barreto, Jorge a Perálvarez, Mariano b Antonio Rodríguez, Jose c Morales, Alfredo a Riera, Montse a López, Manel b Garrido, Blas b Lechuga, Laura a Dominguez, Carlos a

a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA (Spain)

b UNIVERSITY OF BARCELONA (Spain)

c UNIVERSITY OF HAVANA (Cuba)

Author keywords

Electroluminescence; Field effect luminescence; PECVD; Si NC; Silicon led; Silicon luminescence; Suboxide

Indexed keywords

CAPACITORS; CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT MEASUREMENT; ELECTROLUMINESCENCE; HOLE MOBILITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CMOS CAPACITIVE DEVICES; FIELD EFFECT LUMINESCENCE; PULSED ELECTRICAL STIMULATION; SILICON LUMINESCENCE; SUBOXIDES;

NANOCRYSTALLINE SILICON;

EID: 34247112218 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2006.12.015 Document Type: Article

Times cited : (23)

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