Record-low thresholds of long-wavelength InGaAsN/GaAs SQWs lasers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2004, Pages 69-70

  Averbeck, R ^a   Jaschke, G ^a   Geelhaar, L ^a   Riechert, H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; WAVEGUIDES;

LASER WAVELENGTHS; MATERIAL QUALITY; PLASMA POWER; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 17044395468     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. H. Riechert, L. Geelhaar, G. Ebbinghaus, A. Lima, A. Ramakrishnan and G. Steinle, "l .3 μm VCSELs for fiber-optical communication systems", 15th International Conference on Indium Phosphide and Related Materials (IPRM 2003), Santa Barbara (2003).
2. M. Fischer, D. Gollub, M. Reinhardt, M. Kamp, A. Forchel, "GaInNAs based lasers for the 1.3 to 1.5 μm range", J. Cryst. Growth 251, 353 (2003).
3. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, W. Ha and J.S. Harris Jr., "Low-threshold CW GaInNAsSb/GaAs laser at 1.49 um", Electron. Lett. 39, 1445 (2003).
4. D.A. Livshits, A.Yu. Egorov and H. Riechert, "8 W continuous wave operation of InGaAsN lasers at 1.3 μm", Electron. Lett. 36, 1381 (2000).
5. N. Tansu, N.J. Kirsch and L.J: Mawst, "Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers", Appl. Phys. Lett. 81, 2523 (2002).