Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy

Semiconductors

Volumn 38, Issue 3, 2004, Pages 340-343

  Soshnikov, I P ^a   Kryzhanovskaya, N V ^a   Ledentsov, N N ^a   Egorov, A Yu ^a   Mamutin, V V ^a   Odnoblyudov, V A ^a   Ustinov, V M ^a   Gorbenko, O M ^b   Kirmse, H ^c   Neumann, W ^c   Bimberg, D ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^c HUMBOLDT UNIVERSITY   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11144357648     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1682340     Document Type: Article

References (13)

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7. A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1143 (2003) [Semiconductors 37, 1119 (2003)].
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9. I. P. Soshnikov, N. V. Kryzhanovskaya, O. M. Gorbenko, et al., Semicond. Sci. Technol. (in press).
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13. I. P. Soshnikov, N. N. Ledentsov, B. V. Volovik, et al., in Proceedings of 9th International Symposium on Nanostructures: Physics and Technology (2001), Vol. 1, p. 82.