Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 463-470

  Mitsuhara, Manabu ^a   Ogasawara, Matsuyuki ^a   Sugiura, Hideo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BARRIER LAYER; COMPRESSIVE STRAIN; DOUBLE CRYSTAL X RAY DIFFRACTION; THREADING DISLOCATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033870647     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00838-6     Document Type: Article

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