Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm

Electronics Letters

Volumn 40, Issue 12, 2004, Pages 739-741

  Yeh, J Y ^a   Tansu, N ^b   Mawst, L J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BLUE SHIFTS; LASING WVELENGTH; SEPARATE CONFINEMENT HETEROSTRUCTURES (SCH);

QUANTUM WELL LASERS;

EID: 3042542035     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040474     Document Type: Article

References (10)

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8. Tansu, N., Yeh, J.Y., and Mawst, L.J.: 'Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers', Appl. Phys. Lett., 2003, 83, (13), pp. 2512-2514
9. Tansu, N., Yeh, J.Y., and Mawst, L.: 'High-performance InGaAsN quantum-well broad-area and single-mode ridge lasers for telecommunication', Proc. of MRS Spring Meeting, 2004; Symp. L: New Materials for MicroPhotonics, San Francisco, CA, USA, 2004
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