Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 89-92

  Ang, Kah Wee ^a   Chin, Hock Chun ^a   Chui, King Jien ^a   Li, Ming Fu ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CARRIER MOBILITY; DRAIN CURRENT; SILICON CARBIDE; TRANSISTORS;

CARRIER BACKSCATTERING; CONDUCTION BAND BARRIER; DRIVE CURRENT;

MOSFET DEVICES;

EID: 34447259495     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307645     Document Type: Conference Paper

References (9)

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