Device design of high-speed source-heterojunction-MOS transistors (SHOTs): Optimization of source band offset and graded heterojunction

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2598-2605

  Mizuno, Tomohisa ^a,b   Irisawa, Toshifumi ^c   Takagi, Shin Ichi ^c,d  

^a National Institute of Advanced Industrial Science and Technology   (Japan)

^b KANAGAWA UNIVERSITY   (Japan)

^c MIRAI ASET   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ballistic transport; Band offset; Graded heterojunction; High velocity electron injection; SOI; Source engineering

Indexed keywords

CONDUCTION BANDS; ELECTRON INJECTION; HETEROJUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

BALLISTIC TRANSPORT; BAND OFFSET; HIGH-VELOCITY ELECTRON INJECTION; SOURCE ENGINEERING;

MOSFET DEVICES;

EID: 35148841434     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904588     Document Type: Article

References (9)

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