Computer simulation of the vacancy defects interaction with shuffle dislocation in silicon

Superlattices and Microstructures

Volumn 45, Issue 1, 2009, Pages 1-7

  Li, Chengxiang ^a,b   Meng, Qingyuan ^b  

^a TSINGHUA UNIVERSITY   (China)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Dislocation velocity; Molecular dynamics simulation; Silicon; Threading dislocations; Vacancy defects

Indexed keywords

DEFECTS; DYNAMICS; FLOW INTERACTIONS; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; QUANTUM CHEMISTRY; SYSTEMS ENGINEERING; VANADIUM COMPOUNDS; VELOCITY;

ATOMIC INTERACTIONS; DI VACANCIES; DISLOCATION SLIPS; DISLOCATION VELOCITY; MOLECULAR DYNAMICS SIMULATION; RING OPERATORS; SHUFFLE DISLOCATIONS; SIGE/SI HETEROSTRUCTURES; THREADING DISLOCATION DENSITIES; THREADING DISLOCATIONS; VACANCY CLUSTERS; VACANCY DEFECTS;

VACANCIES;

EID: 58149125218     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.10.033     Document Type: Article

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