Comparison between classical potentials and ab initio methods for silicon under large shear

Journal of Physics Condensed Matter

Volumn 15, Issue 41, 2003, Pages 6943-6953

  Godet, J ^a   Pizzagalli, L ^a   Brochard, S ^a   Beauchamp, P ^a  

^a UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; MOLECULAR VIBRATIONS; NUCLEATION; STACKING FAULTS; STRAIN;

ENERGY VIBRATION;

SILICON;

EID: 0142200755     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/41/004     Document Type: Article

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