Low-dislocation relaxed SiGe grown on an effective compliant substrate

Journal of Electronic Materials

Volumn 29, Issue 7, 2000, Pages 950-955

  Luo, Y H ^a   Liu, J L ^a   Jin, G ^a   Wang, K L ^a   Moore, C D ^a   Goorsky, M S ^a   Chih, C ^a   Tu, K N ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

COMPLIANT SUBSTRATES; DISLOCATION DENSITY; DISLOCATION DISTRIBUTION; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034225442     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0187-0     Document Type: Article

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