Relaxation mechanism of low temperature SiGe/Si(0 0 1) buffer layers

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1279-1284

  Vescan, Lili ^a   Wickenhäuser, Susanne ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

90 dislocation; LPCVD; Relaxed SiGe buffer; Virtual substrate

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EXTRAPOLATION; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTICAL MICROSCOPY; OXYGEN; POINT DEFECTS; RELAXATION PROCESSES; SOLID STATE DEVICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

90° DISLOCATION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); RELAXED SIGE BUFFER; VIRTUAL SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2342509664     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.02.011     Document Type: Article

References (17)

1. Izyumskaya NF, Avrutin VS, Vyatkin AF. Control over strain relaxation in Si-based heterostructures. 2004 in this issue.
2. Chen H., Guo L.W., Cui Q., Hu Q., Huang Q., Zhou J.M. Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy. J. Appl. Phys. 79(2):1996;1167-1169.
3. Linder K.K., Zhang F.C., Rieh J.-S., Bhattacharya P., Houghton D. Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer. Appl. Phys. Lett. 70(24):1997;3224-3226.
4. Kasper E., Lyutovich K., Bauer M., Oehme M. New virtual substrate concept for vertical MOS transistors. Thin Solid Films. 336:1998;319-322.
5. Wickenhäuser S. LPCVD-Epitaxie für relaxierte Pufferschichten und vertikale MOS-Feldeffekttransistoren. Ph.D. Thesis Jül-3756, Forschungszentrum Jülich, 2000.
6. x dots grown by selective epitaxy. Semic. Sci. Technol. 9:1994;387-391.
7. x/Si heterostructures grown by LPCVD. J. Cryst. Growth. 125:1992;301-310.
8. x/Si deposited by selective epitaxy. Mater. Res. Soc. Symp. Proc. 533:1998;69-75.
9. Matthews J.W., Blakeslee A.E. Defects in epitaxial multilayers: III Preparation of almost perfect multilayers. J. Cryst. Growth. 32:1976;265-273.
10. x/Si deposited by selective epitaxy. Appl. Phys. Lett. 70(3):1997;324-326.
11. x/(1. 0 0)Si heterostructures Appl. Phys. Lett. 57(20):1990;2124-2126.
12. Hull D., Bacon D.J. Introduction to dislocations. 4th ed. 2001;Butterworth-Heinemann, Oxford.
13. Schöck G. Thermodynamics and thermal activation of dislocations. Nabarro F.R.N. Dislocations in solids. vol. 3:1983;North-Holland, Amsterdam.
14. Hull R., Bean J.C., Werder D.C., Leibenguth R.E. Activation barriers to strain relaxation in lattice-mismatched epitaxy. Phys. Rev. B. 40:1989;1681-1684.
15. Hull R., Bean J.C. New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission microscope observations of misfit dislocations in thin strained epitaxial layers. Phys. Stat. Sol. (a). 138:1993;533-546.
16. LeGoues F.K., Eberl K., Iyer S.S. Relaxation by the modified Frank-Read mechanism in compositionally uniform thin films. Appl. Phys. Lett. 60(23):1990;2862-2864.
17. x films grown by selective epitaxy. Mater. Res. Soc. Symp. Proc. 298:1993;45-50.