Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 13, 2005, Pages 1-3

  Shoukri, Kareem M ^a   Haddara, Yaser M ^a   Knights, A P ^a   Coleman, P G ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; DOPPLER EFFECT; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING FILMS;

BUFFER LAYERS; DEFECT CONCENTRATION; FLOAT ZONE (FZ); SILICON GERMANIUM (SIGE);

SILICON COMPOUNDS;

EID: 17644406365     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897826     Document Type: Article

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