Heterostructures GexSi1-x/Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: Specific features of plastic relaxation

Thin Solid Films

Volumn 466, Issue 1-2, 2004, Pages 69-74

  Bolkhovityanov, Yu B ^a   Deryabin, A S ^a   Gutakovskii, A K ^a   Revenko, M A ^a   Sokolov, L V ^a,b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Germanium; Low temperature growth; Misfit dislocations; Molecular beam epitaxy; Silicon

Indexed keywords

COMPOSITION; DISLOCATIONS (CRYSTALS); FILM GROWTH; GERMANIUM; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; NUCLEATION; POINT DEFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON;

DISLOCATION NUCLEATION; LOW TEMPERATURE GROWTH; PLASTIC RELAXATION; THREADING DISLOCATIONS;

HETEROJUNCTIONS;

EID: 4544235985     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.010     Document Type: Article

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