Atomistic simulation of the 60{ring operator} dislocation mobility in silicon crystal

Superlattices and Microstructures

Volumn 40, Issue 2, 2006, Pages 113-118

  Li, Cheng xiang ^a   Meng, Qing yuan ^a   Li, Gen ^a   Yang, Li jun ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Dislocation dipole; Dislocation velocity; Molecular dynamics simulation; The Peierls stress

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; MOLECULAR DYNAMICS; PHONONS; TEMPERATURE DISTRIBUTION;

ATOMISTIC SIMULATION; DISLOCATION DIPOLE; DISLOCATION VELOCITY; MOLECULAR DYNAMICS SIMULATION; PARRINELLO-RAHMAN ALGORITHM; PEIERLS-NABARRO MODEL; SILICON CRYSTAL; THE PEIERLS STRESS;

SILICON;

EID: 33746558638     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.05.004     Document Type: Article

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