Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: Experimental lepecvd indications and an interpretation based on strain-dependent dislocation nature

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 290-296

  Marzegalli, A ^a   Montalenti, F ^a   Bollani, M ^a   Miglio, Leo ^a   Isella, G ^b   Chrastina, D ^b   Von Kanel H ^b  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

STRAIN RELAXATION; TERSOFF POTENTIALS; VEGARD'S LAW; VERTICAL SUBSTRATES (VS);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4544383506     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.031     Document Type: Conference Paper

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