Computer simulation of the 60° dislocation interaction with vacancy cluster in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 4, 2008, Pages

  Li, Chengxiang ^a   Meng, Qingyuan ^a   Zhong, Kangyou ^a   Wang, Chaoying ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 39049143872     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.045211     Document Type: Article

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