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Volumn 15, Issue 10, 2005, Pages 667-669

A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications

Author keywords

Monolithic microwave integrated circuit (MMIC); Power amplifier (PA); Pseudomorphic high electronic mobility transistor (PHEMT); Wideband code division multiple access (W CDMA)

Indexed keywords

CARRIER MOBILITY; CODE DIVISION MULTIPLE ACCESS; ELECTRIC IMPEDANCE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WAVELENGTH DIVISION MULTIPLEXING;

EID: 27144509189     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.856852     Document Type: Article
Times cited : (12)

References (14)
  • 4
    • 0033708970 scopus 로고    scopus 로고
    • A compact S-band MMIC high power amplifier module
    • Jun. 11-16
    • T. Murae, K. Fujii, and T. Matsuno, "A compact S-band MMIC high power amplifier module," in IEEE MTT-S Int. Dig., vol. 2, Jun. 11-16, 2000, pp. 943-946.
    • (2000) IEEE MTT-S Int. Dig. , vol.2 , pp. 943-946
    • Murae, T.1    Fujii, K.2    Matsuno, T.3
  • 9
    • 0024048518 scopus 로고
    • A new method for determining the FET small-signal equivalent circuit
    • Jul.
    • G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microw. Theory Tech., vol. MTT-36, no. 7, pp. 1151-1159, Jul. 1988.
    • (1988) IEEE Trans. Microw. Theory Tech. , vol.MTT-36 , Issue.7 , pp. 1151-1159
    • Dambrine, G.1    Cappy, A.2    Heliodore, F.3    Playez, E.4
  • 10
    • 0026185658 scopus 로고
    • Equivalent-circuit parameter extraction for cold GaAs MESFETs
    • Jul.
    • R. Anholt and S. Swirhun, "Equivalent-circuit parameter extraction for cold GaAs MESFETs," IEEE Trans. Microw. Theory Tech., vol. MTT-39, no. 7, pp. 1243-1247, Jul. 1991.
    • (1991) IEEE Trans. Microw. Theory Tech. , vol.MTT-39 , Issue.7 , pp. 1243-1247
    • Anholt, R.1    Swirhun, S.2
  • 11
    • 0020878580 scopus 로고
    • A theory for the prediction of GaAs FET load-pull power contours
    • S. C. Cripps, "A theory for the prediction of GaAs FET load-pull power contours," in IEEE MTT-S Int. Dig., 1983, pp. 221-223.
    • (1983) IEEE MTT-S Int. Dig. , pp. 221-223
    • Cripps, S.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.