Submicrometer copper T-gate AlGaN/GaN HFETs: The gate metal stack effect

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 350-353

  Sun, H F ^a   Alt, Andreas R ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

AlGaN GaN heterojunction field effect transistor (HFET); Current gain cutoff frequency; Gate metal stack

Indexed keywords

ALUMINUM GALLIUM NITRIDE; COPPER; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLIZING; TRANSCONDUCTANCE;

CURRENT-GAIN CUTOFF FREQUENCY; GATE METAL STACK; HETEROJUNCTION FIELD-EFFECT TRANSISTORS (HFETS);

FIELD EFFECT TRANSISTORS;

EID: 34247644574     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895380     Document Type: Article

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