Comparative studies of δ -doped In0.45 Al0.55 as in0.53 Ga0.47 AsGaAs metamorphic HEMTs with Au, TiAu, NiAu, and PtAu gates

Journal of the Electrochemical Society

Volumn 153, Issue 11, 2006, Pages

  Su, Ke Hua ^a   Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Chen, I Liang ^a   Chen, Yeong Jia ^c   Wu, Chang Luen ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^d Transcom Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ALLOYS; KINK EFFECTS;

GAIN CONTROL; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; IONIZATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33749619130     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2349286     Document Type: Article

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