The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 782-786

  Zhang, X ^a   Li, A Z ^a   Lin, C ^a   Zheng, Y L ^a   Xu, G Y ^a   Qi, M ^a   Zhang, Y G ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Antimonides; B3. Infrared devices

Indexed keywords

ABSORPTION SPECTROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; PASSIVATION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

TREATMENT EFFECTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037381613     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02369-2     Document Type: Conference Paper

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