Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Lai, Po Hsien ^a   Fu, Ssu I ^a   Hung, Ching Wen ^a   Tsai, Yan Ying ^a   Chen, Tzu Pin ^a   Chen, Chun Wei ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; GATES (TRANSISTOR); IMPACT IONIZATION; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS;

SCHOTTKY BARRIERS; SCHOTTKY GATES; THRESHOLD ENERGY;

TRANSISTORS;

EID: 33846040756     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2410233     Document Type: Article

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