Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1019-1023

  Syvajarvi M ^a   Yakimova, R ^a,b   Glans, P A ^a   Henry, A ^a   MacMillan, M F ^a,c   Johansson, L I ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Outokumpu AB   (Sweden)

^c NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MORPHOLOGY; NUCLEATION; SILICON CARBIDE; SUBLIMATION; SUBSTRATES; SURFACE ROUGHNESS; SURFACES;

DISLOCATION CONTROLLED GROWTH MECHANISM; EPITAXIAL LAYERS; GROWTH RATE; POLYTYPE DISTURBANCES; SUBLIMATION GROWTH;

MONOLAYERS;

EID: 0033514580     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01090-2     Document Type: Article

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