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Volumn , Issue , 1996, Pages 706-709
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C-V characteristics of SiO2 thin films prepared by sol-gel method
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC VARIABLES MEASUREMENT;
FILM PREPARATION;
IONS;
MOS DEVICES;
POROSITY;
SILICA;
SOL-GELS;
THERMAL CONDUCTIVITY;
CAPACITANCE VOLTAGE CHARACTERISTICS;
MOBILE IONS;
TETRAETHYL ORTHOSILICATE;
THIN FILMS;
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EID: 0030421358
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (3)
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