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Volumn 22, Issue 5, 2004, Pages 2052-2055

Sub-100°C a-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; METALLIZING; PARAMETER ESTIMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TEMPERATURE MEASUREMENT;

EID: 8444248939     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1784826     Document Type: Review
Times cited : (30)

References (18)
  • 3
    • 2442650461 scopus 로고    scopus 로고
    • Baltimore, MD, May
    • A. Yoshida et al., SID Conference Digest, Baltimore, MD, 18-23 May 2003, p. 856.
    • (2003) SID Conference Digest , vol.18-23 , pp. 856
    • Yoshida, A.1
  • 18
    • 0032316962 scopus 로고    scopus 로고
    • Y. Kuo, Vacuum 51, 741 (1998).
    • (1998) Vacuum , vol.51 , pp. 741
    • Kuo, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.