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Volumn 22, Issue 5, 2004, Pages 2052-2055
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Sub-100°C a-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFORMATION;
DIELECTRIC MATERIALS;
ELECTRIC POTENTIAL;
METALLIZING;
PARAMETER ESTIMATION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON NITRIDE;
TEMPERATURE MEASUREMENT;
DEPOSITION TEMPERATURES;
GATE DIELECTRICS;
PLASTIC SUBSTRATES;
THERMAL DEFORMATION;
THIN FILM TRANSISTORS;
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EID: 8444248939
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1784826 Document Type: Review |
Times cited : (30)
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References (18)
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