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Volumn 266-269 B, Issue , 2000, Pages 1009-1014
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Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: Model systems for advanced device processing
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0003105195
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/s0022-3093(99)00894-7 Document Type: Article |
Times cited : (9)
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References (14)
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