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Volumn 266-269 B, Issue , 2000, Pages 1009-1014

Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: Model systems for advanced device processing

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[No Author keywords available]

Indexed keywords


EID: 0003105195     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00894-7     Document Type: Article
Times cited : (9)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.