Sensitivity study of two high-throughput resolution metrics for photoresists

Applied Optics

Volumn 47, Issue 1, 2008, Pages 56-63

  Anderson, Christopher N ^a   Naulleau, Patrick P ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; EXTREME ULTRAVIOLET LITHOGRAPHY; SENSITIVITY ANALYSIS;

FOCUS CONTROL; RESOLUTION DETERMINATION;

PHOTORESISTS;

EID: 40749094491     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.47.000056     Document Type: Article

References (14)

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13. As an external control, all experimental and modeling corner data are taken at and around the dose where the coded 100 nm features print at 100 nm.
14. Note that commercial modeling packages such as PROLITH and SOLID E could also be used.