A novel approximate model for resist process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3334, Issue , 1998, Pages 752-763

  Ahn, Chang Nam ^a   Kim, Hee Bom ^a   Baik, Ki Ho ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Acid diffusion; Aerial image; Diffused aerial image; Optical proximity correction

Indexed keywords

ACIDS; AMPLIFICATION; DIFFUSION; LIGHT; OPTICAL RESOLVING POWER; PHOTOLITHOGRAPHY; THREE DIMENSIONAL;

ACID DIFFUSION; AERIAL IMAGE; CALCULATION SPEED; CHEMICAL AMPLIFICATION (CA); DIFFUSED AERIAL IMAGE; MAJOR FACTOR; NONLINEARITY (INCLUDING BIFURCATION THEORY); OPTICAL PROXIMITY CORRECTION; POST-EXPOSURE BAKE (PEB); PROXIMITY EFFECTS;

PHOTORESISTS;

EID: 25144522920     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310808     Document Type: Conference Paper

References (6)

1. T. A. Brunner and R. A. Ferguson, "Approximate Models for Resist Processing Effects", SPIE Vol. 2726, P198 (1996).
2. C. A. Mack, "Evaluation of Proximity Effects Using Three-Dimensional Optical Lithography Simulation", SPIE Vol. 2726, P634 (1996).
3. N. Cobb, A. Zakhor, "Experimental Results on Optical Proximity Correction with Variable Threshold Resist Model", SPIE Vol. 3051, P458 (1997).
4. H. Futatsuya, T. Chijimatsu, S. Asai, and I. Hanyu, "Practical Method of Evaluating Two Dimensional Resist Features for Lithographic DRC", SPIE Vol. 3051, P499 (1997).
5. C. Dolainsky and W. Maurer, "Application of a Simple Resist Model to Fast Optical Proximity Correction", SPIE Vol. 3051, P774 (1997).
6. H. Fukuda and S. Okazaki, "Kinetic Model and Simulation for Chemical Amplification Resists", J. Electrochem. Soc., Vol. 137, No. 2, P675 (1990).