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Volumn 6517, Issue PART 1, 2007, Pages

Recent results from the Berkeley 0.3-NA EUV microfield exposure tool

Author keywords

Aberrations; Extreme ultraviolet; Illuminator; Lithography; Photoresist

Indexed keywords

ILLUMINATORS; MICROFIELD EXPOSURE TOOLS; PROGRAMMABLE FIELD SIZE;

EID: 35148824081     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.713440     Document Type: Conference Paper
Times cited : (12)

References (21)
  • 1
    • 35148823663 scopus 로고    scopus 로고
    • 4th International EUVL Symposium Steering Committee, November 7-9, Austin, TX
    • 4th International EUVL Symposium Steering Committee, San Diego, CA, November 7-9,2005, proceedings available from SEMATECH, Austin, TX.
    • (2005) proceedings available from SEMATECH
    • San Diego, C.A.1
  • 2
    • 35148850176 scopus 로고    scopus 로고
    • 2006 International Symposium on Extreme Ultraviolet Lithography Steering Committee, Barcelona, Spain, October 15-18,2006, proceedings available from SEMATECH, Austin, TX.
    • 2006 International Symposium on Extreme Ultraviolet Lithography Steering Committee, Barcelona, Spain, October 15-18,2006, proceedings available from SEMATECH, Austin, TX.
  • 3
    • 3843137187 scopus 로고    scopus 로고
    • Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic
    • P. Naulleau, et al., "Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic," Proc. SPIE 5374, 881-891 (2004).
    • (2004) Proc. SPIE , vol.5374 , pp. 881-891
    • Naulleau, P.1
  • 4
    • 24644508361 scopus 로고    scopus 로고
    • High-resolution EUV imaging tools for resist exposure and aerial image monitoring
    • A. Brunton, et al., "High-resolution EUV imaging tools for resist exposure and aerial image monitoring," Proc. SPIE 5751, 78-89 (2005).
    • (2005) Proc. SPIE , vol.5751 , pp. 78-89
    • Brunton, A.1
  • 5
    • 24644503076 scopus 로고    scopus 로고
    • Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)
    • H. Oizumi, Y. Tanaka, I. Nishiyama, H. Kondo, K. Murakami, "Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)," Proc. SPIE 5751, 102-109 (2005).
    • (2005) Proc. SPIE , vol.5751 , pp. 102-109
    • Oizumi, H.1    Tanaka, Y.2    Nishiyama, I.3    Kondo, H.4    Murakami, K.5
  • 6
    • 33745628745 scopus 로고    scopus 로고
    • First performance results of the ASML alpha demo tool
    • H. Meiling, et al., "First performance results of the ASML alpha demo tool," Proc. SPIE 6151, 615108 (2006).
    • (2006) Proc. SPIE , vol.6151 , pp. 615108
    • Meiling, H.1
  • 8
    • 29044442484 scopus 로고    scopus 로고
    • Characterization of the synchrotron-based 0.3 numerical aperture extreme ultraviolet microexposure tool at the Advanced Light Source
    • P. Naulleau, K. Goldberg, E. Anderson, K. Dean, P. Denham, J. Cain, B. Hoef, K. Jackson, "Characterization of the synchrotron-based 0.3 numerical aperture extreme ultraviolet microexposure tool at the Advanced Light Source," J. Vac. Sci. & Technol. B 23, 2840-2843 (2005).
    • (2005) J. Vac. Sci. & Technol. B , vol.23 , pp. 2840-2843
    • Naulleau, P.1    Goldberg, K.2    Anderson, E.3    Dean, K.4    Denham, P.5    Cain, J.6    Hoef, B.7    Jackson, K.8
  • 9
    • 31544458972 scopus 로고    scopus 로고
    • Resist-based measurement of the contrast transfer function in a 0.3-numerical aperture extreme ultraviolet microfield optic
    • J. Cain, P. Naulleau, C. Spanos, "Resist-based measurement of the contrast transfer function in a 0.3-numerical aperture extreme ultraviolet microfield optic," J. Vac. Sci. & Technol. B 24, 326-330 (2006).
    • (2006) J. Vac. Sci. & Technol. B , vol.24 , pp. 326-330
    • Cain, J.1    Naulleau, P.2    Spanos, C.3
  • 13
    • 0037428835 scopus 로고    scopus 로고
    • A Fourier-synthesis custom-coherence illuminator for EUV microfield lithography
    • P. Naulleau, K. Goldberg, P. Batson, J. Bokor, P. Denham, and S. Rekawa, "A Fourier-synthesis custom-coherence illuminator for EUV microfield lithography," Appl. Opt. 42, 820-826 (2003).
    • (2003) Appl. Opt , vol.42 , pp. 820-826
    • Naulleau, P.1    Goldberg, K.2    Batson, P.3    Bokor, J.4    Denham, P.5    Rekawa, S.6
  • 14
    • 35148853660 scopus 로고    scopus 로고
    • Lithographic metrics for the determination of intrinsic resolution limits in EUV resists
    • these proceedings
    • P. Naulleau, C. Anderson, B. La Fontaine, R. Kim, T. Wallow, "Lithographic metrics for the determination of intrinsic resolution limits in EUV resists," these proceedings.
    • Naulleau, P.1    Anderson, C.2    La Fontaine, B.3    Kim, R.4    Wallow, T.5
  • 15
    • 24644434283 scopus 로고    scopus 로고
    • Pattern Collapse and Line Width Roughness Reduction by Surface Conditioner Solutions for 248 nm Lithography
    • P. Zhang, M. B. Rao, M. Jaramillo Jr., B. Horvath, B. Ross, T. Paxton, T. Davis, P. Cook, D. Witko, "Pattern Collapse and Line Width Roughness Reduction by Surface Conditioner Solutions for 248 nm Lithography," Proc. SPIE 5753, 252, (2005).
    • (2005) Proc. SPIE , vol.5753 , pp. 252
    • Zhang, P.1    Rao, M.B.2    Jaramillo Jr., M.3    Horvath, B.4    Ross, B.5    Paxton, T.6    Davis, T.7    Cook, P.8    Witko, D.9
  • 16
    • 33745591950 scopus 로고    scopus 로고
    • Linewidth Roughness Reduction at the 55nm Node Through Combination of Classical Process Optimization and Application of Surface Conditioner Solutions
    • P. Wong, W. Gehoel, S. Sinkwitz, P. Zhang, M. Jaramillo Jr., M. B. Rao, B. Horvath, B. Ross, S. Cassei, "Linewidth Roughness Reduction at the 55nm Node Through Combination of Classical Process Optimization and Application of Surface Conditioner Solutions," Proc. SPIE 6153, 61533V, (2006).
    • (2006) Proc. SPIE , vol.6153
    • Wong, P.1    Gehoel, W.2    Sinkwitz, S.3    Zhang, P.4    Jaramillo Jr., M.5    Rao, M.B.6    Horvath, B.7    Ross, B.8    Cassei, S.9
  • 18
    • 33745627739 scopus 로고    scopus 로고
    • P. Naulleau, J. Cain, K. Dean, and K. Goldberg, Lithographic Characterization of Low-Order Aberrations in a 0.3NA EUV Microfield Exposure Tool, Proc. SPIE 6151, 6151104 (2006).
    • P. Naulleau, J. Cain, K. Dean, and K. Goldberg, "Lithographic Characterization of Low-Order Aberrations in a 0.3NA EUV Microfield Exposure Tool," Proc. SPIE 6151, 6151104 (2006).
  • 20
    • 35148848719 scopus 로고    scopus 로고
    • Aerial image modeling was performed using the PROLITH modeling package from KLA-Tencor, San Jose, CA 95134.
    • Aerial image modeling was performed using the PROLITH modeling package from KLA-Tencor, San Jose, CA 95134.
  • 21
    • 33744499487 scopus 로고    scopus 로고
    • Spin-on-glass coatings for the generation of super-polished substrates for use in the extreme ultraviolet regime
    • F. Salmassi, P. Naulleau, E. Gullikson, "Spin-on-glass coatings for the generation of super-polished substrates for use in the extreme ultraviolet regime," Appl. Opt. 45, 2404-2408 (2005).
    • (2005) Appl. Opt , vol.45 , pp. 2404-2408
    • Salmassi, F.1    Naulleau, P.2    Gullikson, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.