New architectures for high resolution patterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  De Silva, Anuja ^a   Felix, Nelson ^b   Forman, Drew ^b   Jing, Sha ^b   Ober, Christopher K ^b  

^a Cornell University ^*  (United States)

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

193nm lithography; Chemical amplification; EUV; Glass transition temperature (Tg); Hybrid resists; Line edge roughness (LER); Molecular glass resists

Indexed keywords

193NM LITHOGRAPHY; CHEMICAL AMPLIFICATION; EUV; GLASS TRANSITION TEMPERATURE (TG); HYBRID RESISTS; LINE EDGE ROUGHNESS (LER); MOLECULAR GLASS RESISTS;

AMPLIFICATION; CARBON DIOXIDE; ELECTRIC CONDUCTIVITY; GLASS; HYBRID MATERIALS; MOLECULES; PHOTORESISTS; POLYMERIC GLASS; POLYMERS; ROUGHNESS MEASUREMENT; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SUPERCONDUCTING TRANSITION TEMPERATURE; ULTRAVIOLET DEVICES;

GLASS TRANSITION;

EID: 57349157898     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772667     Document Type: Conference Paper

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