MOCVD growth of HfSixOy films from hafnium β-diketonato silylamides and siloxides

Vacuum

Volumn 81, Issue 1, 2006, Pages 13-17

  Abrutis, A ^a   Hubert Pfalzgraf, L G ^b   Pasko, S ^a,b   Touati, N ^b   Kazlauskiene, V ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

^b INST DE RECHERCHES SUR LA CATALYSE   (France)

Author keywords

Chemical vapor deposition; Dielectric properties; Hafnium silicate; Metal organic precursors; Photoelectron spectroscopy

Indexed keywords

ANNEALING; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PULSATILE FLOW; STOICHIOMETRY; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION;

HAFNIA REFLECTIONS; LOW PRESSURE PHENOMENA; PULSED LIQUID INJECTION; SILYLAMIDES;

HAFNIUM COMPOUNDS;

EID: 33747350710     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.01.045     Document Type: Article

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