Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

Journal of Surface Investigation

Volumn 1, Issue 4, 2007, Pages 380-385

  Govorkov, A V ^a   Polyakov, A Ya ^a   Yugova, T G ^a   Smirnov, N B ^a   Petrova, E A ^a   Mezhennyi, M V ^a   Markov, A V ^a   Lee, I H ^b   Pearton, S J ^c  

^a All Russian Institute of Aviation Materials   (Russian Federation)

^b Chonbuk National University   (South Korea)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49249117494     PISSN: 10274510     EISSN: 18197094     Source Type: Journal    
DOI: 10.1134/S1027451007040039     Document Type: Article

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