One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 6, 2007, Pages 2005-2009

  Iida, D ^a   Miura, A ^a   Okadome, Y ^a   Tsuchiya, Y ^a   Kawashima, T ^a   Nagai, T ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SAPPHIRE SUBSTRATES; SIDEWALL EPITAXIAL LATERAL OVERGROWTH (SELO);

DEFECT DENSITY; DISLOCATIONS (CRYSTALS); GROWTH (MATERIALS); LIGHT EMITTING DIODES; SAPPHIRE;

GALLIUM NITRIDE;

EID: 34547176842     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674810     Document Type: Conference Paper

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