Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2145-2147

  Kawashima, T ^a   Hayakawa, T ^a   Hayashi, M ^a   Nagai, T ^a   Iida, D ^a   Miura, A ^a   Kasamatsu, Y ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION WAVELENGTH; EPITAXIAL LATERAL OVERGROWTH; HETEROSTRUCTURES; INTERNAL QUANTUM EFFICIENCY; M-PLANE; MULTIQUANTUM WELLS; SINGLE PEAK; V/III RATIO;

DEFECT DENSITY; DEFECTS; DIODES; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PHYSICAL OPTICS; QUANTUM EFFICIENCY; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; STACKING FAULTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57249085205     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778486     Document Type: Conference Paper

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