Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2564-2567

  Kroger R ^a   Paskova, T ^a   Monemar, B ^b   Figge, S ^a   Hommel, D ^a   Rosenauer, A ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BASAL PLANE STACKING FAULTS; BASAL PLANES; DEFECT FORMATION; FILM/SUBSTRATE INTERFACE; HYDRIDE VAPOR-PHASE EPITAXY; METAL-ORGANIC VAPOR PHASE EPITAXY; NITRIDE SEMICONDUCTORS; PLANE SAPPHIRE; PRISMATIC STACKING FAULTS; THREADING DISLOCATIONS; TRANSMISSION ELECTRON;

CORUNDUM; CRYSTAL GROWTH; CRYSTALS; DEFECT STRUCTURES; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; NITRIDES; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; STACKING FAULTS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 49749108905     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674909     Document Type: Conference Paper

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