Application of selective area epitaxy for GaN devices

Optica Applicata

Volumn 32, Issue 3, 2002, Pages 503-510

  Paszkiewicz, Regina ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; GALLIUM NITRIDE; LIQUID PHASE EPITAXY; METALLORGANIC VAPOR PHASE EPITAXY;

SELECTED AREA EPITAXY (SAE);

SEMICONDUCTOR DEVICES;

EID: 0036934777     PISSN: 00785466     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (34)

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