InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 276, Issue 3-4, 2005, Pages 439-445

  Tsuchiya, T ^a   Shimizu, J ^a   Shirai, M ^a   Aoki, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

A3. Low pressure; A3. Selective epitaxy; B2. Semiconducting III V materials; B2. Semiconducting indium phosphide; B3. Laser diodes; Metalorganic vapor phase epitaxy

Indexed keywords

COMPOSITION; DIFFUSION; HIGH TEMPERATURE EFFECTS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

GROWTH PATTERNS; GROWTH TEMPERATURES; OPTICAL INTEGRATED DEVICES; SEMICONDUCTING III-IV MATERIALS; VAPOR-PHASE DIFFUSION LENGTHS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 15344349834     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.110     Document Type: Article

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