Multi-wavelength emitting InGaN/GaN quantum well grown on v-shaped GaN(1101) microfacet

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 11, 2007, Pages 4053-4056

  Kang, Eun Sil ^a   Ju, Jin Woo ^a   Kim, Jin Soo ^a   Ahn, Haeng Keun ^a   Lee, June Key ^b   Kim, Jin Hyeok ^b   Shin, Dong Chan ^c   Lee, In Hwan ^a  

^a Chonbuk National University   (South Korea)

^b Chonnam National University   (South Korea)

^c Chosun University   (South Korea)

Author keywords

GaN; InGaN GaN quantum well; Microfacet; MOCVD

Indexed keywords

CATHODOLUMINESCENCE (CL) SPECTRA; CONVENTIONAL PHOTOLITHOGRAPHY; GROWTH OF GAN; IN COMPOSITION; INGAN/GAN; INGAN/GAN MQWS; LUMINESCENCE PEAKS; MICRO-FACETS; MULTI WAVELENGTHS; MULTIPLE QUANTUM WELLS (MQWS); NON-UNIFORM DISTRIBUTIONS; NOVEL ROUTE; QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPE (TEM); WAVE FUNCTIONS; WHITE LIGHT EMITTING DIODE (WLED);

ELECTRON MICROSCOPES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; WELLS; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM WELLS;

GALLIUM; GALLIUM NITRIDE; INDIUM; INDIUM NITRATE; NITRATE; QUANTUM DOT; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; ILLUMINATION; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; LIGHTING; MATERIALS TESTING; NANOTECHNOLOGY; NITRATES; PARTICLE SIZE; QUANTUM DOTS; SEMICONDUCTORS;

EID: 38449111443     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.075     Document Type: Conference Paper

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