Study of the effect of plasma power on ZnO thin films growth using electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Applied Surface Science

Volumn 255, Issue 5 PART 2, 2008, Pages 3375-3380

  Yang, Z ^a   Lim, J H ^a   Chu, S ^a   Zuo, Z ^a   Liu, J L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

ECR; Growth rate; II VI semiconductors; Molecular beam epitaxy; Photoluminescence; Plasma power; X ray diffraction; ZnO

Indexed keywords

CARRIER CONCENTRATION; CYCLOTRONS; GROWTH RATE; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTALLINITIES; ECR PLASMA; ELECTRON CYCLOTRON RESONANCE PLASMA; NON-RADIATIVE; PLANE SAPPHIRE; PLASMA POWER; POWER LEADS; ZNO THIN FILM;

ELECTRON CYCLOTRON RESONANCE;

EID: 56949107749     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.09.068     Document Type: Article

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