ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 691-694

  Xiu, F X ^a   Yang, Z ^a   Zhao, D T ^a   Liu, J L ^a   Alim, K A ^a   Balandin, A A ^a   Itkis, M E ^a   Haddon, R C ^a  

^a University of California ^*  (United States)

Author keywords

Atomic force microscopy (AFM); Buffer layer; Photoluminescence (PL); Raman scattering; X ray diffraction (XRD); ZnO

Indexed keywords

BUFFER LAYER; HOMO-BUFFER LAYER; ROCK-SALT STRUCTURE; THREADING DISLOCATIONS; ZNO;

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SILICON; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 33646753633     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0122-0     Document Type: Conference Paper

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