Cesium/xenon co-sputtering at different energies during ToF-SIMS depth profiling

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 24, 2008, Pages 5159-5165

  Brison, J ^a   Vitchev, R G ^b   Houssiau, L ^a  

^a UNIVERSITY OF NAMUR   (Belgium)

^b FLEMISH INSTITUTE FOR TECHNOLOGICAL RESEARCH VITO   (Belgium)

Author keywords

Cesium; Co sputtering; Energy; Ionization; Silicon; ToF SIMS; Xenon; XPS

Indexed keywords

CESIUM; COBALT; DEPTH PROFILING; ELECTROLYSIS; IONS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY; XENON;

ANALYSIS CONDITIONS; BEAM ENERGIES; CESIUM COVERAGES; CESIUM SPUTTERING; CO-SPUTTERING; DEPTH PROFILES; DUAL BEAMS; ENERGY; MAXIMUM VALUES; PRIMARY IONS; SECONDARY IONS; SIMS DEPTH PROFILES; SIMS DEPTH PROFILING; SURFACE CONCENTRATIONS; TOF-SIMS; XENON IONS; XPS; XPS ANALYSES;

CESIUM COMPOUNDS;

EID: 56949083760     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.09.021     Document Type: Article

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