On the understanding and the optimization of ToF-SIMS depth profiles by cosputtering cesium and xenon

Surface and Interface Analysis

Volumn 38, Issue 12-13, 2006, Pages 1715-1719

  Brison, J ^a   Houssiau, L ^a  

^a UNIVERSITY OF NAMUR   (Belgium)

Author keywords

Au; Cesium; Clusters; Ionization; MCs; Si; ToF SIMS

Indexed keywords

CESIUM; COMPUTER SIMULATION; INTERFACES (MATERIALS); OPTIMIZATION; RESONANT TUNNELING; SECONDARY ION MASS SPECTROMETRY; SIGNAL PROCESSING; SILICON WAFERS; SPUTTER DEPOSITION; XENON;

CESIUM BEAM CONCENTRATIONS; COSPUTTERING CESIUM; DEPTH PROFILES; TUNNELING MODELS;

GOLD;

EID: 33845952476     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2398     Document Type: Conference Paper

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