Factors affecting the retention of Cs + primary ions in Si

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 90-93

  Van Der Heide, P A W ^a   Lupu, C ^a   Kutana, A ^a   Rabalais, J W ^a  

^a University of Houston   (United States)

Author keywords

Ceasium implantation; Silicon; SIMS

Indexed keywords

COMPUTER SIMULATION; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING;

INCIDENT ANGLE; ION SIGNALS; TRANSIENT EFFECTS;

CESIUM;

EID: 2942536240     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.043     Document Type: Conference Paper

References (8)

1. Liau Z.L., Mayer J.W., Brown W.L., Poate J.M. J. Appl. Phys. 49:1978;5295.
2. Deline V.R., Katz W., Evans C.A. Jr., Williams P. Appl. Phys. Lett. 33:1978;830.
3. Chelgren J.E., Deline V.R., Katz W., Evans C.A. Jr. nnJ. Vac. Sci. Technol. 16:1979;324.
4. Mitchell D.F., Clark K.B., Bardwell J.A., Lennard W.N., Massoumi G.R., Mitchell I.V. SIA. 21:1994;44.
5. Robinson M.T., Torrens I.M. Phys. Rev. B. 9:1974;5008.
6. van der Heide P.A.W., Lim M.S., Perry S.S., Bennett J. Nucl. Instrum. Methods Phys. Res. B. 201:2003;413.
7. van der Heide P.A.W., Lim M.S., Perry S.S., Bennett J. Appl. Surf. Sci. 203-204:2003;156.
8. Eckstein W., Hou M., Shulga V.I. Nucl. Instrum. Methods Phys. Res. B. 119:1996;477.