Study of ionization processes during TOF-SIMS analysis by co-sputtering cesium and xenon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 259, Issue 2, 2007, Pages 984-988

  Brison, J ^a   Houssiau, L ^a  

^a UNIVERSITY OF NAMUR   (Belgium)

Author keywords

Cesium; Cluster; Cs; Depth profiles; Ionization; MCs; Quantification; SIMS

Indexed keywords

DEPTH PROFILING; IONIZATION; PROBABILITY; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; XENON;

CO-SPUTTERING; QUANTIFICATION; SURFACE CONCENTRATION;

CESIUM;

EID: 34248667623     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.02.103     Document Type: Article

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