Cesium/xenon dual beam depth profiling with TOF-SIMS: Measurement and modeling of M + , MCs + , and M 2 Cs 2 + yields

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 749-753

  Brison, J ^a   Conard, T ^b   Vandervorst, W ^b   Houssiau, L ^a  

^a UNIVERSITY OF NAMUR   (Belgium)

^b IMEC   (Belgium)

Author keywords

Cesium; Depth profiles; Ionization; MCs cluster; Quantification; TOF SIMS

Indexed keywords

CESIUM; IONIZATION; MODAL ANALYSIS; OPTIMIZATION; POSITIVE IONS; SPUTTERING; XENON;

DEPTH PROFILING; DIRECT CONCENTRATION EFFECT; QUANTIFICATION; WORK FUNCTION;

MASS SPECTROMETRY;

EID: 2942596001     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.048     Document Type: Conference Paper

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