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Volumn 90, Issue 26, 2007, Pages

Properties of B and P doped Ge nanowires

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRON TRAPS; PASSIVATION; SEMICONDUCTING GERMANIUM;

EID: 34547296602     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2752107     Document Type: Article
Times cited : (31)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.