Numerical analysis of homojunction gallium arsenide avalanche photodiodes (GaAs-APDs)

Progress In Electromagnetics Research B

Volumn 7, Issue , 2008, Pages 159-172

  Mokari, H ^a   Derakhshan Barjoei, P ^b  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODIODES; GALLIUM; III-V SEMICONDUCTORS; IONIZATION; NUMERICAL ANALYSIS;

BREAKDOWN PROBABILITY; CARRIER INJECTION; CARRIER MULTIPLICATION; EXCESS NOISE; HOMOJUNCTION; IONIZATION COEFFICIENT; IONIZATION PROCESS; PERFORMANCE FACTORS;

GALLIUM ARSENIDE;

EID: 56749105692     PISSN: 19376472     EISSN: None     Source Type: Journal    
DOI: 10.2528/pierb08032702     Document Type: Article

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